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| WFF10N60 Silicon N-Channel MOSFET Features 10A,600V,RDS(on)(Max 0.75)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Improved dv/dt capability General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge. Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100) IDM VGS EAS EAR dv/dt PD Derating Factor above 25 TJ,Tstg TL Junction and Storage Temperature Channel Temperature 0.4 -55~150 300 W/ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25) (Note2) (Note1) (Note3) (Note1) 6.0* 40* 30 713 18 4.5 50 A A V mJ mJ V/ ns W Drain Source Voltage Continuous Drain Current(@Tc=25) Parameter Value 600 10* Units V A *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RQJC RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient Value Min - Typ - Max 2.5 62.5 Units /W /W Rev.A Sep.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. WFF10N60 Electrical Characteristics(Tc=25) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut -off current Drain -source breakdown voltage Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source Qg plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, nC ID=10A (Note4,5) 6.9 12 tf toff VDD=480V, 34 45 RG=25 (Note4,5) 214 85 300 165 Symbol IGSS V(BR)GSS IDSS V(BR)DSS VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton Test Condition VGS=30V,VDS=0V IG=10 A,VDS=0V VDS=600V,VGS=0V ID=250 A,VGS=0V VDS=10V,ID=250 A VGS=10V,ID=4.75A VDS=50V,ID=4.75A VDS=25V, VGS=0V, f=1MHz VDD=300V, ID=10A Min 30 500 3 - Type 0.66 8.2 1610 156 20 68 109 Max 100 1 4.5 0.75 2065 210 26 91 150 Unit nA V A V V S pF ns Source-Drain Ratings and Characteristics(Ta=25) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=10A,VGS=0V IDR=10A,VGS=0V, dIDR / dt =100 A / s Min - Type 1.05 442 2.16 Max 10 38 1.4 633 3.24 Unit A A V ns C Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=14.5mH IAS=10A,VDD=50V,RG=0 ,Starting TJ=25 3.ISD10A,di/dt300A/us,VDD Steady, all for your advance WFF10N60 Fig.1 On-State Characteristics Fig.2 Transfer characteristics Fig.3 Capacitance Variation vs Drain voltage Fig.4 On-Resistance Variation Energy vs Drain current and Gate Voltage Fig.5 On-Resistance Variation vs Junction Temperature Fig.6 Gate Charge Characteristics 3/7 Steady, all for your advance WFF10N60 Fig.7 Maximum Safe Operation Area Fig.8 Diode Forward voltage Variation vs Source Current and Temperature Fig.9 Transient Thermal Response curve 4/7 Steady, all for your advance WFF10N60 Fig.10 Gate Test circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Uncamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance WFF10N60 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance WFF10N60 TO-220F Package Dimension Unit:mm 7/7 Steady, all for your advance |
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